40V N+N MOS管的規(guī)格技術(shù)介紹
2021/3/1 14:06:05 點(diǎn)擊:
● General Description The ZMD68403S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Absolute Maximum Ratings(TC =25℃)
Electronic Characteristics
- 上一篇:微型貼片式 銻化銦 霍爾元件SNK-101/HW-101A 2021/3/1
- 下一篇:霍爾效應(yīng)傳感器的介紹及特殊應(yīng)用 2021/2/20